| PART |
Description |
Maker |
| AM55-0024_1 AM55-0024 AM55-0024TR-3000 |
High Dynamic Range, 2 Channel IF Amplifier with Power Control 100 - 400 MHz
|
MACOM[Tyco Electronics]
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| APT40M70B2VFRG APT40M70LVFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
|
FAIRCHILD SEMICONDUCTOR CORP
|
| AQW414AZ AQW414AX |
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin side.
|
Matsushita Electric Works(Nais)
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT4014BVFR APT4014SVFR APT4014BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
http://
|
| MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| IRF840 IRF820 IRFE430-JQR-B IRF741 IRFE210-JQR-BE4 |
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
1.8 A, 200 V, 1.725 ohm, Si, POWER, MOSFET
1.2 A, 400 V, 4.15 ohm, N-CHANNEL, Si, POWER, MOSFET
3.1 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
SEMELAB LTD
|
| 1SS398PT |
SWITCHING DIODE VOLTAGE 400 Volts CURRENT 100 mAmpere
|
Chenmko Enterprise Co. Ltd.
|
|
